US 12,274,067 B2
Three-dimensional memory devices and methods for forming the same
Liang Chen, Wuhan (CN); and Wei Liu, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Oct. 29, 2021, as Appl. No. 17/514,678.
Application 17/514,678 is a continuation of application No. PCT/CN2021/123562, filed on Oct. 13, 2021.
Prior Publication US 2023/0110729 A1, Apr. 13, 2023
Int. Cl. H10B 43/40 (2023.01); H10B 41/20 (2023.01); H10B 41/42 (2023.01); H10B 43/20 (2023.01)
CPC H10B 43/40 (2023.02) [H10B 41/20 (2023.02); H10B 41/42 (2023.02); H10B 43/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for forming a three-dimensional (3D) memory device, comprising:
forming a transistor in a first region on a first side of a single crystalline silicon substrate;
forming a step layer in a second region on the first side of the single crystalline silicon substrate;
forming a channel structure extending through a stack structure and in contact with the step layer without extending through the step layer, the stack structure comprising interleaved dielectric layers and conductive layers on the step layer; and
removing part of the single crystalline silicon substrate that is in the second region from a second side opposite to the first side of the single crystalline silicon substrate to expose the step layer from the second side and retaining another part of the single crystalline silicon substrate, corresponding to the transistor, in the first region.