US 12,274,048 B2
Dynamic random access memory device
Li-Wei Feng, Quanzhou (CN); and Janbo Zhang, Quanzhou (CN)
Assigned to Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on May 18, 2022, as Appl. No. 17/746,995.
Claims priority of application No. 202210286521.2 (CN), filed on Mar. 22, 2022; and application No. 202220634718.6 (CN), filed on Mar. 22, 2022.
Prior Publication US 2023/0309291 A1, Sep. 28, 2023
Int. Cl. H10B 12/00 (2023.01); G11C 5/06 (2006.01)
CPC H10B 12/315 (2023.02) [G11C 5/063 (2013.01); H10B 12/0335 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A dynamic random access memory device, comprising:
a substrate comprising a first active region, a first isolation region, a second active region, and a second isolation region arranged in order along a first direction;
a first bit line disposed on the first active region and direct contacting the first active region;
a second bit line disposed on the second isolation region;
an insulating layer disposed between and separating the second bit line and the second isolation region; and
a storage node contact structure disposed between the first bit line and the second bit line and directly contacting a top surface of the second active region, a sidewall of the first isolation region, and a sidewall of the second isolation region.