	US 12,274,047 B2
	Line bending control for memory applications
Gorun Butail, Fremont, CA (US); Shruti Thombare, Sunnyvale, CA (US); Ishtak Karim, San Jose, CA (US); and Patrick Van Cleemput, San Jose, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
Filed on Dec. 22, 2023, as Appl. No. 18/394,479.
Application 18/394,479 is a continuation of application No. 17/297,710, granted, now 11,864,372, previously published as PCT/US2019/062965, filed on Nov. 25, 2019.
Claims priority of provisional application 62/773,689, filed on Nov. 30, 2018.
Prior Publication US 2024/0172413 A1, May 23, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 12/00 (2023.01)

CPC H10B 12/053 (2023.02) [H10B 12/34 (2023.02)]

21 Claims

1. A method for reducing bending of word lines in a memory cell, comprising:

a) providing a substrate including a plurality of word lines arranged adjacent to one another;

b) depositing a layer of film on the plurality of word lines using a deposition process;

c) after depositing the layer of film, measuring word line bending;

d) comparing the word line bending to a threshold tolerance range;

e) based on the word line bending, adjusting at least one of temperature and pressure of the deposition process; and

f) repeating b) to e) one or more times using one or more substrates, respectively, until the word line bending is within the threshold tolerance range.