| CPC H04N 25/704 (2023.01) [H04N 23/672 (2023.01); H04N 25/709 (2023.01); H10F 39/18 (2025.01); H10F 39/8037 (2025.01); H10F 39/8057 (2025.01); H10F 39/811 (2025.01)] | 13 Claims |
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1. An image sensor, comprising:
a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material, wherein each pixel comprises a plurality of subpixels that are configured to receive incoming light through an illuminated surface of the semiconductor material,
wherein the plurality of pixels comprises at least one autofocusing phase detection (PDAF) pixel comprising:
a first subpixel without a light shielding, wherein the first subpixel generates a first electrical output, and
a second subpixel without the light shielding, wherein the second subpixel generates a second electrical output,
wherein an autofocusing of the image sensor is at least in part determined based on an absence of a photodiode from at least one subpixel, and based on combining the first electrical output of the first subpixel and the second electrical output of the second subpixel,
wherein the second subpixel includes the photodiode, and wherein the first subpixel does not include the photodiode.
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