US 12,273,103 B2
Drive circuit of bridge arm switching transistor, drive circuit, and power converter
Xingqiang Peng, Shenzhen (CN); Shaoqing Dong, Dongguan (CN); and Jing Wen, Dongguan (CN)
Assigned to HUAWEI TECHNOLOGIES CO., LTD., Guangdong (CN)
Filed by HUAWEI TECHNOLOGIES CO., LTD., Guangdong (CN)
Filed on Jul. 1, 2022, as Appl. No. 17/856,674.
Claims priority of application No. 202110753639.7 (CN), filed on Jul. 2, 2021.
Prior Publication US 2023/0006668 A1, Jan. 5, 2023
Int. Cl. H03K 17/687 (2006.01); H02M 7/5387 (2007.01); H03K 17/06 (2006.01)
CPC H03K 17/687 (2013.01) [H02M 7/5387 (2013.01); H03K 17/06 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A drive circuit of a bridge arm switching transistor, wherein the bridge arm switching transistor comprises a first switching transistor and a second switching transistor, a first terminal of the first switching transistor is connected to a power supply, a second terminal of the first switching transistor is connected to a first terminal of the second switching transistor, and a second terminal of the second switching transistor is grounded;
the drive circuit comprises a low-voltage region and at least two high-voltage regions isolated by at least two isolation rings, wherein the at least two high-voltage regions comprise a first high-voltage region and a second high-voltage region, the first high-voltage region corresponds to a first voltage domain, the second high-voltage region corresponds to a second voltage domain, and a voltage of the first voltage domain is different from a voltage of the second voltage domain;
a semiconductor device configured to drive the second switching transistor is disposed in the low-voltage region; and
P-type semiconductor devices are disposed in each of the first high-voltage region and the second high-voltage region, and the P-type semiconductor devices are configured to drive the first switching transistor.