US 12,273,100 B2
Main-auxiliary field-effect transistor configurations
Hailing Wang, Acton, MA (US); Dylan Charles Bartle, Arlington, MA (US); Hanching Fuh, Allston, MA (US); Jerod F. Mason, Bedford, MA (US); David Scott Whitefield, Andover, MA (US); and Paul T. DiCarlo, Marlborough, MA (US)
Assigned to SKYWORKS SOLUTIONS, INC., Irvine, CA (US)
Filed by SKYWORKS SOLUTIONS, INC., Irvine, CA (US)
Filed on May 28, 2024, as Appl. No. 18/675,938.
Application 18/675,938 is a continuation of application No. 18/209,441, filed on Jun. 13, 2023, granted, now 11,996,832.
Application 18/209,441 is a continuation of application No. 17/889,325, filed on Aug. 16, 2022, granted, now 11,677,395, issued on Jun. 13, 2023.
Application 17/889,325 is a continuation of application No. 17/374,881, filed on Jul. 13, 2021, granted, now 11,418,185, issued on Aug. 16, 2022.
Application 17/374,881 is a continuation of application No. 17/009,060, filed on Sep. 1, 2020, granted, now 11,063,586, issued on Jul. 13, 2021.
Application 17/009,060 is a continuation of application No. 16/702,477, filed on Dec. 3, 2019, granted, now 10,763,847, issued on Sep. 1, 2020.
Application 16/702,477 is a continuation of application No. 15/716,323, filed on Sep. 26, 2017, granted, now 10,498,329, issued on Dec. 3, 2019.
Claims priority of provisional application 62/399,635, filed on Sep. 26, 2016.
Prior Publication US 2025/0007512 A1, Jan. 2, 2025
Int. Cl. H03K 17/16 (2006.01); H01L 23/66 (2006.01); H01L 27/12 (2006.01); H03K 17/10 (2006.01); H03K 17/12 (2006.01); H03K 17/693 (2006.01); H04B 1/38 (2015.01)
CPC H03K 17/161 (2013.01) [H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H03K 17/102 (2013.01); H03K 17/122 (2013.01); H03K 17/693 (2013.01); H01L 2223/6677 (2013.01); H03K 2217/0018 (2013.01); H04B 1/38 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A radio-frequency (RF) switch comprising:
a pole;
a throw electrically coupled to the pole through a series arm and electrically coupled to a reference potential node through a shunt arm, the series arm implemented as a stack of field-effect transistors (FETs) in a main-auxiliary branch configuration, the shunt arm implemented as a stack of FETs, the main-auxiliary branch configuration including a main path having a plurality of main FETs and an auxiliary path having a plurality of auxiliary FETs, the auxiliary path configured to generate third-order harmonics or third-order intermodulation products that are opposite in phase to third-order harmonics or third-order intermodulation products generated by the main path.