US 12,272,927 B2
Vertical cavity surface emitting device
Komei Tazawa, Tokyo (JP); Seiichiro Kobayashi, Tokyo (JP); and Yusuke Yokobayashi, Tokyo (JP)
Assigned to STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Appl. No. 17/624,159
Filed by STANLEY ELECTRIC CO., LTD., Tokyo (JP)
PCT Filed Jun. 17, 2020, PCT No. PCT/JP2020/023747
§ 371(c)(1), (2) Date Dec. 30, 2021,
PCT Pub. No. WO2021/002198, PCT Pub. Date Jan. 7, 2021.
Claims priority of application No. 2019-123060 (JP), filed on Jul. 1, 2019.
Prior Publication US 2022/0368107 A1, Nov. 17, 2022
Int. Cl. H01S 5/00 (2006.01); H01S 5/042 (2006.01); H01S 5/068 (2006.01); H01S 5/183 (2006.01)
CPC H01S 5/06817 (2013.01) [H01S 5/04253 (2019.08); H01S 5/18308 (2013.01); H01S 5/18361 (2013.01); H01S 5/18369 (2013.01); H01S 5/18391 (2013.01); H01S 5/18327 (2013.01); H01S 2301/166 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A vertical cavity surface emitting device comprising:
a substrate;
a first multilayer film reflecting mirror formed on the substrate;
a first semiconductor layer formed on the first multilayer film reflecting mirror, the first semiconductor layer having a first conductivity type;
a light-emitting layer formed on the first semiconductor layer;
a second semiconductor layer formed on the light-emitting layer, the second semiconductor layer having a second conductivity type opposite of the first conductivity type, and the second semiconductor layer having an upper surface with a projection;
an insulating layer that covers the upper surface of the second semiconductor layer, the insulating layer having an opening that exposes the second semiconductor layer on the upper surface of the projection terminated on the upper surface of the projection of the second semiconductor layer;
a transmissive electrode layer that covers the upper surface of the second semiconductor layer exposed from the opening of the insulating layer, the transmissive electrode layer being formed on the insulating layer; and
a second multilayer film reflecting mirror formed on the transmissive electrode layer, the second multilayer film reflecting mirror constituting a resonator together with the first multilayer film reflecting mirror,
wherein:
the second semiconductor layer has a ring-shaped recess on the upper surface, and
the projection of the second semiconductor layer is a part defined by an inner end portion of the recess.