US 12,272,870 B2
Tunable integrated millimeter wave antenna using laser ablation and/or fuses
John F. Kaeding, Boise, ID (US); and Owen R. Fay, Meridian, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 16, 2023, as Appl. No. 18/110,872.
Application 18/110,872 is a division of application No. 16/045,562, filed on Jul. 25, 2018, granted, now 11,588,233.
Prior Publication US 2023/0198139 A1, Jun. 22, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01Q 1/48 (2006.01)
CPC H01Q 1/48 (2013.01) 9 Claims
OG exemplary drawing
 
1. A method comprising:
forming a device layer on a first side of a semiconductor substrate;
forming a through-silicon-via (TSV) passing through the semiconductor substrate;
depositing a first portion and a second portion of an antenna structure onto a second side of the semiconductor substrate opposite the first side, wherein the TSV joins to the first portion of the antenna structure;
electrically coupling the first portion and the second portion of the antenna structure; and
severing an electrical connection between two of the portions of the antenna structure to tune the antenna structure for use with a transmission device.