US 12,272,855 B2
Semiconductor device and methods, where first and second transmission lines are surrounded by first and second high-k dielectric materials
Jiun Yi Wu, Hsinchu (TW); Chien-Hsun Lee, Hsinchu (TW); Chewn-Pu Jou, Hsinchu (TW); and Fu-Lung Hsueh, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 4, 2023, as Appl. No. 18/312,202.
Application 18/312,202 is a continuation of application No. 17/587,581, filed on Jan. 28, 2022, granted, now 11,664,566.
Application 17/587,581 is a continuation of application No. 16/734,976, filed on Jan. 6, 2020, granted, now 11,258,151, issued on Feb. 22, 2022.
Application 16/734,976 is a continuation of application No. 15/696,337, filed on Sep. 6, 2017, granted, now 10,530,030, issued on Jan. 7, 2020.
Application 15/696,337 is a continuation of application No. 14/748,524, filed on Jun. 24, 2015, granted, now 9,786,976, issued on Oct. 10, 2017.
Prior Publication US 2023/0307813 A1, Sep. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01P 3/06 (2006.01); H01P 3/02 (2006.01); H01P 3/08 (2006.01); H01P 11/00 (2006.01)
CPC H01P 3/06 (2013.01) [H01P 3/026 (2013.01); H01P 3/082 (2013.01); H01P 11/003 (2013.01)] 20 Claims
OG exemplary drawing
 
15. A semiconductor device comprising:
a first transmission line;
a second transmission line, wherein the first transmission line is concentric with the second transmission line;
a first high-k dielectric layer between the first transmission line and the second transmission line; and
a second high-k dielectric material surrounding the first transmission line, wherein the first high-k dielectric layer is concentric with the second high-k dielectric layer.