US 12,272,816 B2
Active material structure, electrode structure including the same, secondary battery including the same, and method of fabricating the same
Huisu Jeong, Seongnam-si (KR); Hwiyeol Park, Hwaseong-si (KR); Kyounghwan Kim, Seoul (KR); Jeongkuk Shon, Hwaseong-si (KR); Junhyeong Lee, Seoul (KR); Sungjin Lim, Suwon-si (KR); and Jin S. Heo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 29, 2020, as Appl. No. 17/036,170.
Claims priority of application No. 10-2019-0178164 (KR), filed on Dec. 30, 2019.
Prior Publication US 2021/0202934 A1, Jul. 1, 2021
Int. Cl. H01M 4/36 (2006.01); H01M 4/02 (2006.01); H01M 4/04 (2006.01)
CPC H01M 4/366 (2013.01) [H01M 4/043 (2013.01); H01M 4/0471 (2013.01); H01M 2004/021 (2013.01); H01M 2004/025 (2013.01)] 44 Claims
OG exemplary drawing
 
1. An active material structure comprising:
first active material lines arranged in a first direction;
second active material lines arranged in a second direction intersecting the first direction;
intermediate active material lines between the first active material lines and the second active material lines in a third direction intersecting the first direction and the second direction, the intermediate active material lines provided in overlapping regions of the first active material lines and the second active material lines;
first channels extending in the first active material layer and the intermediate active material layer in a first direction; and
second channels extending in the second active material layer and the intermediate active material layer in a second direction intersecting the first direction,
wherein the first active material lines and the second active material lines are electrically connected by the intermediate active material lines, and
wherein the first active material lines, the second active material lines, the intermediate active material lines, or a combination thereof comprises a cathode active material,
wherein a depth of a first channel measured in the third direction is about 50% to about 80% of a thickness of the active material structure measured in the third direction, and
wherein a depth of a second channel measured in the third direction is about 50% to about 80% of the thickness of the active material structure.