US 12,272,767 B2
Ultraviolet light emitting element and light emitting element package including the same
Youn Joon Sung, Gyeonggi-do (KR); Seung Kyu Oh, Gyeonggi-do (KR); Jae Bong So, Gyeonggi-do (KR); Gil Jun Lee, Gyeonggi-do (KR); Won Ho Kim, Gyeonggi-do (KR); Tae Wan Kwon, Seoul (KR); Eric Oh, Gyeonggi-do (KR); Il Gyun Choi, Gyeonggi-do (KR); and Jin Young Jung, Gyeonggi-do (KR)
Assigned to Photon Wave Co., Ltd., Gyeonggi-do (KR)
Filed by Photon Wave Co., Ltd., Gyeonggi-do (KR)
Filed on May 11, 2023, as Appl. No. 18/195,962.
Application 18/195,962 is a continuation of application No. 17/178,261, filed on Feb. 18, 2021, granted, now 11,682,747.
Claims priority of application No. 10-2020-0113153 (KR), filed on Sep. 4, 2020; and application No. 10-2020-0123099 (KR), filed on Sep. 23, 2020.
Prior Publication US 2023/0282769 A1, Sep. 7, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/20 (2010.01); H01L 27/15 (2006.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/14 (2013.01) [H01L 27/153 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/32 (2013.01)] 13 Claims
OG exemplary drawing
 
1. An ultraviolet light emitting element comprising:
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed;
a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region;
a first electrode electrically connected to the first conductive semiconductor layer; and
a second electrode electrically connected to the second conductive semiconductor layer,
wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer,
wherein the light emitting structure includes a plurality of light emitting regions extending in a first direction and spaced apart from each other in a second direction perpendicular to the first direction,
wherein each of the plurality of light emitting regions includes a first end and a second end,
wherein the first end of each of the plurality of light emitting regions includes curved portions curved in directions receding from each other, and
wherein the first pad overlaps the curved portions of the plurality of light emitting regions.