US 12,272,764 B2
Advanced electronic device structures using semiconductor structures and superlattices
Petar Atanackovic, Henley Beach South (AU); and Matthew Godfrey, Sydney (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Jan. 10, 2023, as Appl. No. 18/152,452.
Application 17/446,926 is a division of application No. 16/676,139, filed on Nov. 6, 2019, granted, now 11,114,585, issued on Sep. 7, 2021.
Application 15/853,379 is a division of application No. 15/601,890, filed on May 22, 2017, granted, now 9,871,165, issued on Jan. 16, 2018.
Application 15/601,890 is a division of application No. 14/976,337, filed on Dec. 21, 2015, granted, now 9,691,938, issued on Jun. 27, 2017.
Application 18/152,452 is a continuation of application No. 17/446,926, filed on Sep. 3, 2021, granted, now 11,563,144.
Application 16/676,139 is a continuation of application No. 16/154,558, filed on Oct. 8, 2018, granted, now 10,483,432, issued on Nov. 19, 2019.
Application 16/154,558 is a continuation of application No. 15/853,379, filed on Dec. 22, 2017, granted, now 10,153,395, issued on Dec. 11, 2018.
Application 14/976,337 is a continuation of application No. PCT/IB2015/053203, filed on May 1, 2015.
Claims priority of application No. 2014902008 (AU), filed on May 27, 2014.
Prior Publication US 2023/0163237 A1, May 25, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 27/15 (2006.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/14 (2010.01); H01L 33/16 (2010.01); H01L 33/18 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/0242 (2013.01); H01L 21/02458 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02507 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 27/15 (2013.01); H01L 33/007 (2013.01); H01L 33/10 (2013.01); H01L 33/14 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a growth axis;
a first layer consisting of a single layer, wherein the single layer comprises:
a first semiconductor comprising a polar crystal structure with a spontaneous polarization axis that is parallel to the growth axis; and
a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis, wherein the monotonic change in composition comprises a continuous change in composition along the growth axis;
wherein the monotonic change in composition induces p-type or n-type conductivity in the first layer; and
a second layer comprising a second semiconductor with the polar crystal structure, wherein there is no abrupt change in polarization at an interface between the first layer and the second layer;
wherein the monotonic change in composition is the only monotonic change in composition in the semiconductor structure, and
wherein the first semiconductor is selected from:
aluminium gallium nitride (AlxGa1-xN) where 0≤x≤1;
boron aluminium nitride BxAl1-xN where 0≤x≤1;
aluminium gallium indium nitride (AlxGayIn1-x-yN) where 0≤x≤1, 0≤y≤1 and 0≤(x+y)≤1; and
magnesium zinc oxide (MgxZn1-xO) where 0≤x≤1.