US 12,272,761 B2
Nitride semiconductor component and process for its production
Armin Dadgar, Berlin (DE); and Alois Krost, Berlin (DE)
Assigned to Azur Space Solar Power GmbH, Heilbronn (DE)
Filed by AZUR SPACE Solar Power GmbH, Heilbronn (DE)
Filed on Oct. 4, 2022, as Appl. No. 17/959,910.
Application 17/959,910 is a division of application No. 15/201,576, filed on Jul. 4, 2016, granted, now 12,125,938.
Application 15/201,576 is a continuation of application No. 11/643,632, filed on Dec. 20, 2006, granted, now 9,406,505, issued on Aug. 2, 2016.
Claims priority of provisional application 60/776,457, filed on Feb. 23, 2006.
Prior Publication US 2023/0134459 A1, May 4, 2023
Int. Cl. H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/007 (2013.01) [H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A nitride semiconductor component comprising:
a substrate with a silicon surface;
an aluminum-containing nitride nucleation layer on and above the silicon surface of the substrate, the aluminum-containing nitride nucleation layer having a thickness between 10 nm and 50 nm;
an aluminum-containing nitride buffer layer on and above the aluminum-containing nitride nucleation layer;
a first SiN masking layer on and above the aluminum-containing nitride buffer layer;
a first gallium-containing nitride semiconductor layer on and above the first masking layer, the first gallium-containing nitride semiconductor layer having an internal structure with coalesced crystallite growth islands, wherein layer planes of the first gallium-containing nitride semiconductor layer above a coalescence layer of the first gallium-containing nitride semiconductor layer have the coalesced crystallite growth islands;
a nitride intermediate layer composed of an aluminum-containing nitride intermediate layer, the nitride intermediate layer adjoining the first gallium-containing nitride semiconductor layer and having a thickness of 8 nm to 15 nm;
a second gallium-containing nitride semiconductor layer on the nitride intermediate layer and above the first gallium-containing nitride semiconductor layer, the nitride intermediate layer and the second gallium-containing nitride semiconductor layer forming a layer sequence;
a second masking layer on the layer sequence; and
a multi-quantum-well structure composed of nitride semiconductor material disposed on the second masking laver, the multi-quantum-well structure being disposed above the second gallium-containing nitride semiconductor layer.