US 12,272,743 B2
Semiconductor device comprising a drain back contact electrode, method of manufacturing the same, and semiconductor package structure
Junfeng Wu, Jiangsu (CN); Xingxing Wu, Jiangsu (CN); and Yi Pei, Jiangsu (CN)
Assigned to GPOWER SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 17/614,972
Filed by GPOWER SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Jun. 1, 2020, PCT No. PCT/CN2020/093724
§ 371(c)(1), (2) Date Nov. 29, 2021,
PCT Pub. No. WO2020/239122, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 201910464881.5 (CN), filed on May 30, 2019.
Prior Publication US 2022/0231157 A1, Jul. 21, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 23/495 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 23/49506 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/4175 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a multilayer semiconductor layer located on one side of the substrate, in which a Two-Dimensional Electron Gas is formed;
a first source, a first gate, and a first drain located on one side of the multilayer semiconductor layer away from the substrate and located within an active region of the multilayer semiconductor layer, the first gate located between the first source and the first drain; and
a back surface gate contact electrode located on one side of the substrate away from the multilayer semiconductor layer;
wherein the back surface gate contact electrode is electrically connected to the first gate; and
wherein the semiconductor device further comprises a drain via structure penetrating the substrate and the multilayer semiconductor layer, and a drain back contact electrode located on one side of the substrate away from the multilayer semiconductor layer, and wherein the first drain is electrically connected to the drain back contact electrode through the drain via structure.