US 12,272,738 B2
Methods of forming semiconductor devices in a layer of epitaxial silicon carbide
Hans-Joachim Schulze, Taufkirchen (DE); Roland Rupp, Lauf (DE); and Francisco Javier Santos Rodriguez, Villach (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jul. 13, 2023, as Appl. No. 18/351,600.
Application 18/351,600 is a continuation of application No. 17/314,672, filed on May 7, 2021, granted, now 11,735,642.
Application 17/314,672 is a continuation of application No. 16/360,652, filed on Mar. 21, 2019, granted, now 11,031,483, issued on Jun. 8, 2021.
Claims priority of application No. 102018106866.2 (DE), filed on Mar. 22, 2018.
Prior Publication US 2023/0361196 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66068 (2013.01) [H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/0262 (2013.01); H01L 21/02634 (2013.01); H01L 21/02658 (2013.01); H01L 21/0475 (2013.01); H01L 21/048 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 21/7806 (2013.01); H01L 21/7813 (2013.01); H01L 29/0804 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66053 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a layer of porous silicon carbide supported by a silicon carbide substrate;
providing dopants in the layer of porous silicon carbide such that the layer of porous silicon carbide comprises dopants defining a resistivity of the layer of porous silicon carbide and the resistivity of the layer of porous silicon carbide is different from a resistivity of the silicon carbide substrate;
providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide;
forming a plurality of semiconductor devices in the layer of epitaxial silicon carbide;
separating the silicon carbide substrate from the layer of epitaxial silicon carbide at the layer of porous silicon carbide; and
after the separating, removing the layer of porous silicon carbide from the layer of epitaxial silicon carbide.