US 12,272,732 B2
Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof
Jung-Hung Chang, Changhua (TW); Zhi-Chang Lin, Hsinchu (TW); Shih-Cheng Chen, New Taipei (TW); Chien Ning Yao, Hsinchu (TW); Kuo-Cheng Chiang, Hsinchu (TW); and Chih-Hao Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 16, 2023, as Appl. No. 18/211,055.
Application 18/211,055 is a continuation of application No. 17/238,505, filed on Apr. 23, 2021, granted, now 11,710,774.
Prior Publication US 2023/0335607 A1, Oct. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/417 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/3086 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 29/0665 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first epitaxial source/drain feature having:
a first surface; and
a second surface;
a contact etch stop layer in contact with the first epitaxial source/drain feature at the second surface;
a first dielectric fin in contact with the first surface of the first epitaxial source/drain feature;
a gate structure disposed over a semiconductor channel layer, wherein the semiconductor channel layer is connected to the first epitaxial source/drain feature; and
a first hybrid fin in contact with the contact etch stop layer, wherein the first hybrid fin comprises:
a dielectric liner; and
a dielectric filling material.