US 12,272,726 B2
Semiconductor structure with nanostructure
Chao-Ching Cheng, Hsinchu (TW); I-Sheng Chen, Taipei (TW); Tzu-Chiang Chen, Hsinchu (TW); Shih-Syuan Huang, Taichung (TW); and Hung-Li Chiang, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 16, 2023, as Appl. No. 18/487,213.
Application 17/532,681 is a division of application No. 16/681,097, filed on Nov. 12, 2019, granted, now 11,183,560, issued on Nov. 23, 2021.
Application 18/487,213 is a continuation of application No. 17/532,681, filed on Nov. 22, 2021, granted, now 11,824,088.
Application 16/681,097 is a continuation of application No. 15/979,123, filed on May 14, 2018, granted, now 10,522,622, issued on Dec. 31, 2019.
Prior Publication US 2024/0047526 A1, Feb. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/76 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01)
CPC H01L 29/0673 (2013.01) [H01L 21/02603 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
nanostructures formed over the substrate and spaced apart from each other in a first direction;
a gate structure wrapping around the nanostructures;
a semiconductor layer attached to the nanostructures in a second direction different from the first direction;
inner spacers sandwiched between the semiconductor layer and the gate structure in the second direction; and
a silicide layer formed over the semiconductor layer,
wherein a first portion of the semiconductor layer is sandwiched between the inner spacers and the silicide layer in the second direction.