US 12,272,720 B2
Front-side type image sensors
Walter Schwarzenbach, Saint Nazaire les Eymes (FR)
Assigned to Soitec, Bernin (FR)
Filed by Soitec, Bernin (FR)
Filed on Dec. 23, 2022, as Appl. No. 18/145,976.
Application 17/133,316 is a division of application No. 16/340,879, granted, now 10,903,263, issued on Jan. 26, 2021, previously published as PCT/EP2017/075797, filed on Oct. 10, 2017.
Application 18/145,976 is a continuation of application No. 17/133,316, filed on Dec. 23, 2020, granted, now 11,552,123.
Claims priority of application No. 1659763 (FR), filed on Oct. 10, 2016.
Prior Publication US 2023/0127950 A1, Apr. 27, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 21/762 (2006.01)
CPC H01L 27/14687 (2013.01) [H01L 21/76251 (2013.01); H01L 21/76254 (2013.01); H01L 27/14601 (2013.01); H01L 27/14643 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate, comprising:
a P− type doped semiconducting support substrate;
a P+ type doped semiconducting epitaxial layer adjacent to the support substrate;
an electrically insulating layer adjacent to the epitaxial layer on a side of the epitaxial layer opposite the support substrate; and
a semiconducting active layer adjacent to the electrically insulating layer on a side of the electrically insulating layer opposite the epitaxial layer.