| CPC H01L 27/14636 (2013.01) [H01L 27/14643 (2013.01)] | 20 Claims |
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1. A semiconductor apparatus, comprising:
a first interconnect section;
a first interlayer insulating film covering and in contact with at least one surface side of the first interconnect section;
a first electrode section provided in a first through-hole provided in the first interlayer insulating film, the first electrode section being electrically connected to the first interconnect section;
a second interconnect section;
a second interlayer insulating film covering and in contact with at least one surface side of the second interconnect section facing the first interconnect section; and
a second electrode section provided in a second through-hole provided in the second interlayer insulating film, the second electrode section being electrically connected to the second interconnect section,
wherein the first electrode section and the second electrode section are directly bonded to each other,
wherein the first interconnect section includes a first metal including Au and the first electrode section includes an alloy containing the first metal including Au, and
wherein the first electrode section has a larger coefficient of thermal expansion than a coefficient of thermal expansion of the first interconnection section and the second electrode section has a larger coefficient of thermal expansion than a coefficient of thermal expansion of the second interconnect section.
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