US 12,272,711 B2
Solid-state imaging device and imaging device
Shin Kitano, Kanagawa (JP); Koya Tsuchimoto, Kanagawa (JP); and Kei Nakagawa, Tokyo (JP)
Assigned to Sony Group Corporation, Tokyo (JP); and Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/285,008
Filed by SONY GROUP CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Oct. 18, 2019, PCT No. PCT/JP2019/041224
§ 371(c)(1), (2) Date Apr. 13, 2021,
PCT Pub. No. WO2020/085265, PCT Pub. Date Apr. 30, 2020.
Claims priority of application No. 2018-201132 (JP), filed on Oct. 25, 2018.
Prior Publication US 2021/0320140 A1, Oct. 14, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14634 (2013.01) [H01L 27/14605 (2013.01); H01L 27/14612 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An imaging device, comprising:
a photoelectric conversion region that converts incident light into electric charges;
a first readout circuit coupled to the photoelectric conversion region at a first location; and
a second readout circuit including a portion coupled to the photoelectric conversion region at a second location, the second readout circuit being configured to control the first readout circuit,
wherein the first location and the second location are on a same side of the photoelectric conversion region,
wherein the first readout circuit includes a first transistor having a first gate at the first location and a plurality of third transistors coupled to the first transistor,
wherein gates of the plurality of third transistors are linearly arranged in a line disposed in parallel to a row direction extending away from a first corner portion of the photoelectric conversion region,
wherein the second readout circuit includes a second transistor having a second gate at the second location and a plurality of fourth transistors coupled to the second transistor, and
wherein gates of the plurality of fourth transistors are linearly arranged in a line disposed in parallel to a row direction extending away from a second corner portion of the photoelectric conversion region.