| CPC H01L 27/14627 (2013.01) [H01L 27/14621 (2013.01); H01L 27/1463 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01)] | 20 Claims |

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1. An image sensor device, comprising:
a semiconductor substrate;
a plurality of photo sensitive regions in the semiconductor substrate;
a dielectric layer over a backside surface of the semiconductor substrate facing away from the plurality of photo sensitive regions;
a grid structure over a backside surface of the dielectric layer facing away from the semiconductor substrate, the grid structure comprising a plurality of grid lines, wherein each of the plurality of grid lines comprises a lower portion and an upper portion forming an interface with the lower portion; and
a plurality of convex dielectric lenses alternately arranged with the plurality of grid lines of the grid structure over the backside surface of the dielectric layer, wherein apexes of the plurality of convex dielectric lenses are higher than the interface between the upper portion and the lower portion of each of the plurality of grid lines, wherein the lower portion of each of the plurality of grid lines has a refractive index greater than a refractive index of each of the plurality of convex dielectric lenses.
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