| CPC H10F 39/80377 (2025.01) [H10F 39/807 (2025.01)] | 12 Claims |
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1. An image sensor comprising:
a semiconductor substrate with a trench; and
an insulating pattern in the trench of the semiconductor substrate,
wherein the semiconductor substrate has a doped region that is doped into the semiconductor substrate and that completely surrounds sidewalls of the trench,
wherein the doped region comprises:
a first region, which is in contact with the insulating pattern and comprises a dopant and a first auxiliary element, the first region completely surrounding the trench; and
a second region, which is interposed between the first region and the semiconductor substrate and completely surrounds the first region, the second region comprising the dopant, and
wherein a concentration of the dopant in the first region is uniform and is higher than a concentration of the first auxiliary element in the first region.
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