| CPC H01L 27/14612 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14831 (2013.01)] | 19 Claims |
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1. An image sensor, comprising:
a substrate including a first pixel group and a second pixel group, which are directly adjacent to each other in a first direction, each of the first and second pixel groups comprising first to ninth pixels, which are arranged to form three rows in the first direction and three columns in a second direction, the first to third pixels constituting a first column, the fourth to sixth pixels constituting a second column, and the seventh to ninth pixels constituting a third column;
first to ninth transfer transistors, which are disposed in each of the first and second pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors comprising a transfer gate and a floating diffusion region;
a selection transistor disposed in at least one of the fourth to sixth pixels in each of the first and second pixel groups; and
source follower transistors respectively disposed in at least two pixels of the first to third pixels and the seventh to ninth pixels in each of the first and second pixel groups,
wherein source follower gates of the source follower transistors are connected to each other and the floating diffusion region of each of the first to ninth transfer transistors, and
wherein the floating diffusion region of each of the first to ninth transfer transistors disposed in the second pixel group is connected to at least one of the source follower gates disposed in the first pixel group.
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