| CPC H01L 27/11807 (2013.01) [H01L 2027/11881 (2013.01)] | 11 Claims |
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1. A semiconductor device comprising:
a first power rail, a second power rail, and a third power rail which extend in a first direction on a semiconductor substrate and are sequentially spaced apart from each other in a second direction intersecting the first direction;
a single fourth power rail which extends in the first direction on the semiconductor substrate between the first power rail and the third power rail;
a first well of a first conductive type which is displaced inside the semiconductor substrate between the first power rail and the third power rail; and
a plurality of cells which are continuously displaced between the first power rail and the third power rail and share the first well, wherein:
the first power rail and the third power rail are provided with a first voltage,
the second power rail is provided with a second voltage that is different from the first voltage,
the single fourth power rail is provided with a third voltage that is different from the first voltage and the second voltage, and
the plurality of cells are provided with the third voltage from the single fourth power rail.
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