US 12,272,649 B2
Semiconductor device and method
Chung-Hui Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Nov. 29, 2023, as Appl. No. 18/522,980.
Application 18/522,980 is a continuation of application No. 17/225,578, filed on Apr. 8, 2021, granted, now 11,842,963.
Claims priority of provisional application 63/024,926, filed on May 14, 2020.
Prior Publication US 2024/0096804 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); G06F 30/392 (2020.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 23/5286 (2013.01) [G06F 30/392 (2020.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductive line extending in a first direction on a front side of a semiconductor wafer;
a first power rail extending in the first direction on a back side of the semiconductor wafer;
a first transistor comprising:
a first gate structure extending in a second direction perpendicular to the first direction;
first and second active regions adjacent to the first gate structure; and
a first channel region extending between the first and second active regions through the first gate structure;
a first via positioned between and electrically connecting the first active region and the first conductive line; and
a second via positioned between and electrically connecting the second active region and the first power rail, the second via extending at least partially through the semiconductor wafer.