US 12,272,635 B2
Semiconductor device and manufacturing method thereof
Jae Yoon Noh, Cheongju-si (KR); Tae Kyung Kim, Cheongju-si (KR); Hyo Sub Yeom, Cheongju-si (KR); and Jeong Yun Lee, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Nov. 16, 2023, as Appl. No. 18/511,695.
Application 18/511,695 is a division of application No. 16/865,024, filed on May 1, 2020, granted, now 11,901,284.
Claims priority of application No. 10-2019-0118206 (KR), filed on Sep. 25, 2019.
Prior Publication US 2024/0088021 A1, Mar. 14, 2024
Int. Cl. H10B 43/27 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 41/30 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/30 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 63/00 (2023.01)
CPC H01L 23/5226 (2013.01) [H01L 23/5283 (2013.01); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/30 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 63/84 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a stack structure in which a plurality of interlayer insulating layers and a plurality of sacrificial layers are stacked in an alternating manner;
simultaneously forming first holes to form contact plugs that penetrate the stack structure and second holes to form support structures by etching the stack structure;
forming contact plugs by filling the first holes with a barrier layer and a conductive layer for gates;
simultaneously filling the second holes with the barrier layer and the conductive layer for gates while filling the first holes;
forming, on the top of the stack structure, a mask pattern including first openings through which a region of the second holes is exposed;
removing the conductive layer for gates in the second holes by performing a first etching process by using the mask pattern; and
forming support structures by filling the second holes with an insulating layer.