US 12,272,622 B2
Package and manufacturing method thereof
Ming-Fa Chen, Taichung (TW); Sung-Feng Yeh, Taipei (TW); and Jian-Wei Hong, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 29, 2023, as Appl. No. 18/325,104.
Application 18/325,104 is a continuation of application No. 17/577,035, filed on Jan. 17, 2022, granted, now 11,699,638.
Application 17/577,035 is a continuation of application No. 16/745,355, filed on Jan. 17, 2020, granted, now 11,227,812, issued on Jan. 18, 2022.
Claims priority of provisional application 62/892,552, filed on Aug. 28, 2019.
Prior Publication US 2023/0298973 A1, Sep. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/48 (2006.01); H01L 21/463 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/481 (2013.01) [H01L 21/463 (2013.01); H01L 21/56 (2013.01); H01L 21/76804 (2013.01); H01L 23/3121 (2013.01); H01L 23/544 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package, comprising:
a semiconductor carrier;
a first die disposed over the semiconductor carrier;
a second die stacked on the first die;
a redistribution structure over the second die; and
an electron transmission path extending from the semiconductor carrier to the redistribution structure, wherein the electron transmission path is electrically connected to a ground voltage, a first portion of the electron transmission path is embedded in the semiconductor carrier, a second portion of the electron transmission path is aside the first die, and a third portion of the electron transmission path is aside the second die.