US 12,272,620 B2
Semiconductor structure having elastic member within via
Shing-Yih Shih, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on May 24, 2022, as Appl. No. 17/751,941.
Prior Publication US 2023/0386968 A1, Nov. 30, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 23/562 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a wafer including a substrate, a dielectric layer under the substrate, and a conductive pad surrounded by the dielectric layer, wherein the conductive pad is disposed within the dielectric layer at a positioned above a bottom surface of the dielectric layer;
a passivation layer disposed over the substrate;
a conductive via extending from the conductive pad through the substrate and the passivation layer and partially through the dielectric layer, wherein a top surface of the conductive via is coplanar with a top surface of the passivation layer; and
an elastic member disposed within the conductive via.