US 12,272,616 B2
Heat-dissipating structures for semiconductor devices and methods of manufacture
Chen-Hua Yu, Hsinchu (TW); Tung-Liang Shao, Hsinchu (TW); Yu-Sheng Huang, Hemei Township (TW); Shih-Chang Ku, Taipei (TW); and Chuei-Tang Wang, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 22, 2022, as Appl. No. 17/701,468.
Claims priority of provisional application 63/289,716, filed on Dec. 15, 2021.
Prior Publication US 2023/0187307 A1, Jun. 15, 2023
Int. Cl. H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 25/10 (2006.01); H01L 21/56 (2006.01); H01L 25/18 (2023.01); H01L 27/12 (2006.01)
CPC H01L 23/3735 (2013.01) [H01L 23/3128 (2013.01); H01L 23/367 (2013.01); H01L 24/83 (2013.01); H01L 25/105 (2013.01); H01L 21/56 (2013.01); H01L 24/20 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 25/18 (2013.01); H01L 27/12 (2013.01); H01L 2224/2101 (2013.01); H01L 2224/29186 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83896 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a semiconductor die comprising a substrate, a front-side interconnect structure on a front-side of the substrate, and a backside interconnect structure on a backside of the substrate opposite the front-side interconnect structure, wherein the front-side interconnect structure and the backside interconnect structure have a same width;
a support die disposed on the front-side interconnect structure;
a heat-dissipating structure on the support die, wherein the heat-dissipating structure is thermally coupled to the semiconductor die and the support die, wherein the heat-dissipating structure is not electrically coupled to active devices, wherein the heat-dissipating structure comprises a conductive structure;
a redistribution structure on the backside interconnect structure opposite the substrate, wherein the redistribution structure is electrically coupled to the semiconductor die; and
an encapsulant on the redistribution structure and adjacent to side surfaces of the front-side interconnect structure, the substrate, the backside interconnect structure, the support die, and the heat-dissipating structure.