US 12,272,608 B2
Station-to-station control of backside bow compensation deposition
Yanhui Huang, Sherwood, OR (US); and Vignesh Chandrasekar, King City, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/758,071
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Dec. 10, 2020, PCT No. PCT/US2020/064344
§ 371(c)(1), (2) Date Jun. 27, 2022,
PCT Pub. No. WO2021/138018, PCT Pub. Date Jul. 8, 2021.
Claims priority of provisional application 62/957,077, filed on Jan. 3, 2020.
Prior Publication US 2023/0032481 A1, Feb. 2, 2023
Int. Cl. H01L 21/66 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01)
CPC H01L 22/20 (2013.01) [C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01J 37/32899 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/3321 (2013.01); H01L 21/02211 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A method comprising:
providing a first substrate to a first station in a semiconductor processing chamber;
providing a second substrate to a second station in the semiconductor processing chamber;
concurrently depositing a first bow compensation layer of material on the backside of the first substrate at the first station and a first bow compensation layer of material on the backside of the second substrate at the second station; and
depositing a second bow compensation layer of material on the backside of the first substrate, while the first substrate is at the first station and the second substrate is at the second station, and while not concurrently depositing material on the backside of the second substrate.