US 12,272,604 B2
Integrated circuit device with low threshold voltage
Chung-Liang Cheng, Changhua County (TW); and Ziwei Fang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 12, 2024, as Appl. No. 18/439,362.
Application 17/750,579 is a division of application No. 16/573,866, filed on Sep. 17, 2019, granted, now 11,342,231, issued on May 24, 2022.
Application 18/439,362 is a continuation of application No. 17/750,579, filed on May 23, 2022, granted, now 11,901,241.
Prior Publication US 2024/0186189 A1, Jun. 6, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/823828 (2013.01) [H01L 21/02172 (2013.01); H01L 21/02183 (2013.01); H01L 21/0228 (2013.01); H01L 21/02458 (2013.01); H01L 21/28008 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/42356 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first structure that includes:
a first portion of a substrate;
a first stack of nano-structures disposed over the first portion of the substrate;
a first nitrogen-containing layer disposed between the nano-structures in the first stack; and
a first work function metal layer disposed between the nano-structures in the first stack, wherein the first work function metal layer is separated from the first nitrogen-containing layer by one or more other layers, and wherein the one or more other layers include at least an n-type work function metal layer; and
a second structure that includes:
a second portion of the substrate;
a second stack of nano-structures disposed over the second portion of the substrate;
a second nitrogen-containing layer disposed between the nano-structures in the second stack, wherein the first nitrogen-containing layer and the second nitrogen-containing layer have substantially similar material compositions; and
a second work function metal layer disposed between the nano-structures in the second stack, wherein the second work function metal layer and the first work function metal layer have substantially similar material compositions, and wherein the second work function metal layer is in physical contact with the second nitrogen-containing layer.