US 12,272,602 B2
Selective dual silicide formation
Peng-Wei Chu, Hsinchu (TW); Sung-Li Wang, Hsinchu (TW); and Yasutoshi Okuno, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 16, 2024, as Appl. No. 18/666,322.
Application 17/226,822 is a division of application No. 16/354,259, filed on Mar. 15, 2019, granted, now 10,978,354, issued on Apr. 13, 2021.
Application 18/666,322 is a continuation of application No. 17/816,039, filed on Jul. 29, 2022, granted, now 11,990,376.
Application 17/816,039 is a continuation of application No. 17/226,822, filed on Apr. 9, 2021, granted, now 11,482,458, issued on Oct. 25, 2022.
Prior Publication US 2024/0304499 A1, Sep. 12, 2024
Int. Cl. H01L 21/8238 (2006.01); H01L 21/285 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/823814 (2013.01) [H01L 21/28518 (2013.01); H01L 27/0924 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, comprising:
forming an n-type source/drain feature over a first fin and a p-type source/drain feature over a second fin;
selectively depositing a p-type epitaxial capping layer over the n-type source/drain feature;
selectively depositing an n-type epitaxial capping layer over the p-type source/drain feature;
depositing a dielectric layer over the p-type epitaxial capping layer and the n-type epitaxial capping layer;
forming a first opening through the dielectric layer to expose the p-type epitaxial capping layer;
forming a second opening through the dielectric layer to expose the n-type epitaxial capping layer;
selectively depositing a first metal layer over the second opening to contact the n-type epitaxial capping layer;
depositing a second metal layer over the first opening and the second opening to contact the p-type epitaxial capping layer and the first metal layer;
depositing a capping layer over the second metal layer;
after the depositing of the capping layer, annealing the n-type source/drain feature and the p-type source/drain feature; and
after the annealing, deposit a contact metal layer of the capping layer.