US 12,272,600 B2
Contact features of semiconductor device and method of forming same
Pin-Wen Chen, Keelung (TW); Chang-Ting Chung, Taipei (TW); Yi-Hsiang Chao, New Taipei (TW); Yu-Ting Wen, Taichung (TW); Kai-Chieh Yang, New Taipei (TW); Yu-Chen Ko, Chiayi (TW); Peng-Hao Hsu, Hsinchu (TW); Ya-Yi Cheng, Taichung (TW); Min-Hsiu Hung, Hsinchu (TW); Chun-Hsien Huang, Tainan (TW); Wei-Jung Lin, Hsinchu (TW); Chih-Wei Chang, Hsinchu (TW); and Ming-Hsing Tsai, Chu-Pei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 13, 2022, as Appl. No. 17/663,302.
Claims priority of provisional application 63/298,699, filed on Jan. 12, 2022.
Prior Publication US 2023/0223302 A1, Jul. 13, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/535 (2006.01)
CPC H01L 21/76895 (2013.01) [H01L 21/02063 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76868 (2013.01); H01L 21/76889 (2013.01); H01L 23/535 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a dielectric layer over an epitaxial source/drain region;
forming an opening in the dielectric layer, the opening exposing a portion of the epitaxial source/drain region;
forming a barrier layer on a sidewall and a bottom of the opening;
performing an oxidation process on the sidewall and the bottom of the opening, the oxidation process transforming a portion of the barrier layer into an oxidized barrier layer and transforming a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer;
removing the oxidized barrier layer; and
filling the opening with a conductive material in a bottom-up manner, the conductive material being in physical contact with the liner layer.