US 12,272,576 B2
Apparatus and methods for determining fluid dynamics of liquid film on wafer surface
Chung-Pin Chou, Hsinchu (TW); Kai-Lin Chuang, Chia-Yi (TW); Yan-Cheng Chen, Hsinchu (TW); Jui Kuo Lai, Taichung (TW); and Jun Xiu Liu, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 18, 2021, as Appl. No. 17/351,990.
Prior Publication US 2022/0406632 A1, Dec. 22, 2022
Int. Cl. H01L 21/67 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/67253 (2013.01) [H01L 21/67051 (2013.01); H01L 22/10 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for inspecting a semiconductor substrate, comprising:
placing a substrate on a rotatable base;
positioning a nozzle arm over the substrate, the nozzle arm including one or more laser transmitters and an array of light sensors arranged in the nozzle arm and facing the substrate;
adjusting an angle of the one or more laser transmitters towards the substrate and transmitting a laser beam using each of the one or more laser transmitters towards the substrate, wherein the laser beam impinges on the substrate;
receiving a reflected laser beam from the substrate at a subset of light sensors of the array of light sensors;
identifying the subset of light sensors of the array of light sensors that received the laser beam;
analyzing, by a light monitoring device, a signal of the subset of light sensors of the array of light sensors reflected from the substrate; and
determining whether a process quality on the substrate is within an acceptable range; and
when a process quality on the substrate is not within the acceptable range, automatically adjusting a configurable parameter of a semiconductor manufacturing process to set the process quality within the acceptable range.