| CPC H01L 21/67092 (2013.01) [B21D 11/10 (2013.01); H01L 21/02035 (2013.01)] | 20 Claims |

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1. A method of curving a wafer, the method comprising:
permanently coupling a curvature adjustment structure to a wafer;
inducing a curvature of a largest planar surface of the wafer through the curvature adjustment structure.
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