US 12,272,571 B2
Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
Dengliang Yang, Union City, CA (US); Haoquan Fang, Sunnyvale, CA (US); David Cheung, Foster City, CA (US); Gnanamani Amburose, Fremont, CA (US); Eunsuk Ko, San Jose, CA (US); Wei Yi Luo, Fremont, CA (US); and Dan Zhang, Fremont, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
Filed on Apr. 9, 2024, as Appl. No. 18/630,683.
Application 18/630,683 is a division of application No. 18/217,696, filed on Jul. 3, 2023.
Application 18/217,696 is a continuation of application No. 15/845,206, filed on Dec. 18, 2017, granted, now 11,694,911, issued on Jul. 4, 2023.
Claims priority of provisional application 62/436,708, filed on Dec. 20, 2016.
Claims priority of provisional application 62/513,615, filed on Jun. 1, 2017.
Claims priority of provisional application 62/569,094, filed on Oct. 6, 2017.
Prior Publication US 2024/0258130 A1, Aug. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); B08B 5/02 (2006.01)
CPC H01L 21/67069 (2013.01) [H01J 37/32146 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01J 37/32623 (2013.01); H01J 37/32724 (2013.01); H01J 37/32972 (2013.01); H01J 37/3299 (2013.01); H01L 21/31138 (2013.01); B08B 5/023 (2013.01); H01J 37/321 (2013.01); H01J 2237/334 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A substrate processing system, comprising:
a first chamber;
a second chamber including a substrate support to support a substrate;
a dual gas plenum arranged between the first chamber and the second chamber and including a plasma-exposed side directly exposed to plasma and a substrate-facing side, the dual gas plenum comprising a plate comprising:
a first plenum defined by (i) a first gas channel arranged in an annular sidewall of the dual gas plenum (ii) a plurality of connecting gas channels extending along parallel chords through the dual gas plenum between opposite sides of the first gas channel, and (iii) a first plurality of through holes configured to supply reactive gas species and extending from the plurality of connecting gas channels through the substrate-facing side of the dual gas plenum;
a second plenum defined by a second plurality of through holes extending from the plasma-exposed side of the dual gas plenum to the substrate-facing side of the dual gas plenum and configured to supply metastable species, a plurality of rows of the second plurality of through holes arranged between adjacent ones of the plurality of connecting gas channels;
a flange extending radially outwardly from one end of the annular sidewall;
a second gas channel extending horizontally from a radially outer surface of the flange into the flange; and
a third gas channel extending vertically through the annular sidewall and including a first end in fluid communication with a first end of the second gas channel and a second end directly connected to the first gas channel;
a first gas delivery system configured to supply an inert gas species to the first chamber;
a plasma generating system configured to generate plasma including a metastable species in the first chamber during an etching process performed on the substrate; and
a second gas delivery system configured to supply the reactive gas species to the dual gas plenum,
wherein the first plenum is configured to distribute and deliver the reactive gas species into the second chamber without mixing with the metastable species in the dual gas plenum with plasma on during the etching process performed on the substrate,
wherein the inert gas species is selected from a group consisting of helium, argon, neon, krypton, and xenon to the dual gas plenum, and
wherein the reactive gas species is selected from a group consisting of molecular oxygen, molecular nitrogen, molecular hydrogen, nitrogen trifluoride, and carbon tetrafluoride.