US 12,272,570 B2
Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
Dengliang Yang, Union City, CA (US); Haoquan Fang, Sunnyvale, CA (US); David Cheung, Foster City, CA (US); Gnanamani Amburose, Fremont, CA (US); Eunsuk Ko, San Jose, CA (US); Wei Yi Luo, Fremont, CA (US); and Dan Zhang, Fremont, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
Filed on Apr. 9, 2024, as Appl. No. 18/630,603.
Application 18/630,603 is a division of application No. 18/217,696, filed on Jul. 3, 2023.
Application 18/217,696 is a continuation of application No. 15/845,206, filed on Dec. 18, 2017, granted, now 11,694,911, issued on Jul. 4, 2023.
Claims priority of provisional application 62/569,094, filed on Oct. 6, 2017.
Claims priority of provisional application 62/513,615, filed on Jun. 1, 2017.
Claims priority of provisional application 62/436,708, filed on Dec. 20, 2016.
Prior Publication US 2024/0258129 A1, Aug. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); B08B 5/02 (2006.01)
CPC H01L 21/67069 (2013.01) [H01J 37/32146 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01J 37/32623 (2013.01); H01J 37/32724 (2013.01); H01J 37/32972 (2013.01); H01J 37/3299 (2013.01); H01L 21/31138 (2013.01); B08B 5/023 (2013.01); H01J 37/321 (2013.01); H01J 2237/334 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A gas distribution device for etching a substrate in a substrate processing system, comprising:
an annular side wall;
a flange extending radially outwardly from one end of the annular side wall;
a plate defining a dual gas plenum extending between and enclosing an opposite end of the annular side wall and including a plasma-exposed side directly exposed to plasma and a substrate-facing side;
a first gas channel arranged in the annular side wall around a periphery of the dual gas plenum;
a plurality of connecting gas channels extending along parallel chords through the dual gas plenum between opposite sides of the first gas channel;
a second gas channel extending horizontally from a radially outer surface of the flange into the flange;
a third gas channel extending vertically through the annular side wall and including:
a first end in fluid communication with a first end of the second gas channel; and
a second end directly connected to the first gas channel;
a first plurality of through holes extending from the plurality of connecting gas channels through the substrate-facing side of the dual gas plenum; and
a second plurality of through holes extending from the plasma-exposed side of the dual gas plenum to the substrate-facing side of the dual gas plenum, a plurality of rows of the second plurality of through holes arranged between adjacent ones of the plurality of connecting gas channels.