US 12,272,566 B2
Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods
Ali Salih, Mesa, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Dec. 16, 2020, as Appl. No. 17/123,269.
Application 17/123,269 is a division of application No. 16/388,361, filed on Apr. 18, 2019, granted, now 11,018,023.
Claims priority of provisional application 62/770,266, filed on Nov. 21, 2018.
Prior Publication US 2021/0104415 A1, Apr. 8, 2021
Int. Cl. H01L 21/268 (2006.01); H01L 21/02 (2006.01); H01L 21/322 (2006.01); H01L 21/324 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01)
CPC H01L 21/3245 (2013.01) [H01L 21/02381 (2013.01); H01L 21/0254 (2013.01); H01L 21/02675 (2013.01); H01L 21/268 (2013.01); H01L 21/3228 (2013.01); H01L 29/2003 (2013.01); H01L 29/66742 (2013.01); H01L 29/78681 (2013.01); H01L 29/7886 (2013.01); H01L 21/3221 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
growing a semiconductor layer on a substrate;
removing at least a portion of the substrate from an underside portion of the semiconductor layer;
annealing the semiconductor layer to reduce a number of defects in the semiconductor layer using a laser directed to at least a topside portion of the semiconductor layer while supporting the semiconductor layer with a support structure during annealing to prevent sagging of the semiconductor layer; and
replacing the at least the portion of the substrate with a replaced substrate layer.