US 12,272,564 B2
Tin oxide and tin carbide materials for semiconductor patterning applications
Yung-chen Lin, Los Angeles, CA (US); Chi-I Lang, Cupertino, CA (US); and Ho-yung Hwang, Cupertino, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 23, 2021, as Appl. No. 17/456,255.
Claims priority of provisional application 63/125,576, filed on Dec. 15, 2020.
Prior Publication US 2022/0189786 A1, Jun. 16, 2022
Int. Cl. H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/32139 (2013.01) [H01L 21/02535 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of forming features on a substrate, comprising:
forming a hardmask layer on a film stack formed over a substrate, wherein the hardmask layer comprises tin-oxide or tin carbide and the film stack comprises oxide-nitride-oxide (ONO) layers;
disposing a patterned photoresist layer on the hardmask layer having openings therethrough;
supplying a first etching gas mixture into a processing chamber containing the substrate; and
etching the hardmask layer exposed by the openings of the patterned photoresist layer to form a patterned hardmask layer.