US 12,272,562 B2
Oxygen and iodine-containing hydrofluorocarbon compound for etching semiconductor structures
Fabrizio Marchegiani, Wilmington, DE (US)
Assigned to L'Aire Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Paris (FR)
Filed by American Air Liquide, Inc., Fremont, CA (US)
Filed on Dec. 17, 2021, as Appl. No. 17/555,094.
Prior Publication US 2023/0197465 A1, Jun. 22, 2023
Int. Cl. H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/32 (2006.01)
CPC H01L 21/31116 (2013.01) [H01L 21/32 (2013.01); H01L 21/033 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a patterned structure, the method comprising the steps of:
a) introducing a vapor of an oxygen and iodine-containing etching compound into a reaction chamber that contains a substrate, the substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing layer,
wherein the oxygen and iodine-containing etching compound has the formula CnHxFyIzOe, wherein 3≤n≤10, 0≤x≤21, 0≤y≤21, 1≤z≤4 and 1≤e≤2;
b) activating a plasma to produce an activated oxygen and iodine-containing etching compound; and
c) allowing an etching reaction to proceed between the activated oxygen and iodine-containing etching compound and the silicon-containing film to selectively etch the silicon-containing film from the patterned mask layer, thereby forming the patterned structure.