US 12,272,542 B2
Apparatus for cleaning semiconductor silicon wafer and method for cleaning semiconductor silicon wafer
Kensaku Igarashi, Nishigo-mura (JP)
Assigned to SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
Appl. No. 17/275,145
Filed by SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
PCT Filed Sep. 17, 2019, PCT No. PCT/JP2019/036261
§ 371(c)(1), (2) Date Mar. 10, 2021,
PCT Pub. No. WO2020/075448, PCT Pub. Date Apr. 16, 2020.
Claims priority of application No. 2018-192672 (JP), filed on Oct. 11, 2018.
Prior Publication US 2022/0059343 A1, Feb. 24, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/02052 (2013.01) [H01L 21/0201 (2013.01); H01L 21/02381 (2013.01); H01L 21/304 (2013.01); H01L 21/68735 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for cleaning a semiconductor silicon wafer after polishing, the method comprising:
an ozone water treatment step after polishing, of immersing, in ozone water, the semiconductor silicon wafer after polishing;
a step of performing a first ultrasonic-wave-ozone-water treatment of cleaning the semiconductor silicon wafer at room temperature while immersing in ozone water and applying ultrasonic waves; and
a step of performing a second ultrasonic-wave-ozone-water treatment of, after the step of performing the first ultrasonic-wave-ozone-water treatment, pulling out the semiconductor silicon wafer from the ozone water, performing a wafer rotation process of rotating, and cleaning the semiconductor silicon wafer after the wafer rotation process again at room temperature while immersing in ozone water and applying ultrasonic waves; wherein
the step of performing the second ultrasonic-wave-ozone-water treatment is performed once or more times, and subsequently, a hydrofluoric acid treatment step of immersing the semiconductor silicon wafer in hydrofluoric acid and an ozone water treatment step of immersing the semiconductor silicon wafer after the hydrofluoric acid treatment step in ozone water are performed.