US 12,272,541 B2
Etching method and etching apparatus
Naoki Shindo, Nirasaki (JP); Gen You, Nirasaki (JP); and Haruna Suzuki, Tokyo (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 25, 2022, as Appl. No. 17/664,932.
Claims priority of application No. 2021-089934 (JP), filed on May 28, 2021.
Prior Publication US 2022/0384178 A1, Dec. 1, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/02019 (2013.01) [H01L 21/31116 (2013.01); H01L 21/67063 (2013.01); H01L 21/68714 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An etching method, comprising:
preparing a substrate in which titanium nitride and molybdenum or tungsten are present; and
etching the titanium nitride by supplying a processing gas including a ClF3 gas and a N2 gas to the substrate,
wherein in the etching the titanium nitride, a partial pressure ratio of the ClF3 gas to the N2 gas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.
 
11. An etching method, comprising:
preparing a substrate in which titanium nitride and molybdenum or tungsten are present; and
etching the titanium nitride by supplying a processing gas including a ClF3 gas and a N2 gas to the substrate,
wherein in the etching the titanium nitride, a partial pressure ratio of the ClF3 gas to the N2 gas in the processing gas is set to 0.026 or less.