US 12,272,528 B2
Stage and plasma processing apparatus
Yasuharu Sasaki, Miyagi (JP); Tsuguto Sugawara, Miyagi (JP); Shin Yamaguchi, Miyagi (JP); and Hajime Tamura, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jan. 18, 2024, as Appl. No. 18/415,667.
Application 18/415,667 is a continuation of application No. 17/883,264, filed on Aug. 8, 2022, granted, now 11,908,666.
Application 17/883,264 is a continuation of application No. 16/905,470, filed on Jun. 18, 2020, granted, now 11,437,223, issued on Sep. 6, 2022.
Claims priority of application No. 2019-113066 (JP), filed on Jun. 18, 2019.
Prior Publication US 2024/0153749 A1, May 9, 2024
Int. Cl. H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01)
CPC H01J 37/32715 (2013.01) [H01J 37/32091 (2013.01); H01J 37/32211 (2013.01); H01J 37/32541 (2013.01); H01J 37/3255 (2013.01); H01J 37/32568 (2013.01); H01J 37/32642 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01); H01L 21/68721 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber, the substrate support having a substrate supporting portion and an edge ring supporting portion surrounding the substrate supporting portion;
a first clamping electrode disposed in the substrate supporting portion;
a first bias electrode disposed below the first clamping electrode in the substrate supporting portion;
a second bias electrode disposed in the edge ring supporting portion;
a first power source electrically connected to the first bias electrode; and
a second power source electrically connected to the second bias electrode;
wherein a distance between an upper surface of the edge ring supporting portion and the second bias electrode is equal to a distance between an upper surface of the substrate supporting portion and the first bias electrode.