US 12,272,526 B2
Substrate processing method and substrate processing apparatus
Tsukasa Hirayama, Miyagi (JP); and Taku Gohira, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Mar. 25, 2022, as Appl. No. 17/704,575.
Claims priority of application No. 2021-053825 (JP), filed on Mar. 26, 2021.
Prior Publication US 2022/0310361 A1, Sep. 29, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32082 (2013.01); H01J 2237/334 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
(a) providing a substrate including an etching target film and a mask formed on the etching target film and having an opening;
(b) forming a first layer by introducing a first processing gas that generates a first plasma which interacts with the etching target film, the first layer containing a nitrogen atom and a hydrogen atom, the first layer being formed on a side wall of a recess that is formed in the etching target film corresponding to the opening;
(c) after (b), modifying the first layer into a second layer by using a second processing gas containing a halogen-containing gas, the second layer containing ammonium halide (NH4X, where X is any one of F, Cl, Br, and I) or amine halide (NH2X: X is any one of F, Cl, Br, and I); and
(d) after (c), etching the opening by using a third processing gas.