US 12,272,509 B2
Electrically controllable integrated switch
Christian Rivero, Rousset (FR); Pascal Fornara, Pourrieres (FR); Antonio Di-Giacomo, Rousset (FR); and Brice Arrazat, Marignane (FR)
Assigned to STMICROELECTRONICS (ROUSSET) SAS, Rousset (FR)
Filed by STMicroelectronics (Rousset) SAS, Rousset (FR)
Filed on Nov. 12, 2019, as Appl. No. 16/680,940.
Application 16/680,940 is a division of application No. 14/985,083, filed on Dec. 30, 2015, granted, now 10,510,503.
Application 14/985,083 is a division of application No. 14/286,331, filed on May 23, 2014, granted, now 9,355,802, issued on May 31, 2016.
Claims priority of application No. 1355221 (FR), filed on Jun. 6, 2013.
Prior Publication US 2020/0083011 A1, Mar. 12, 2020
Int. Cl. H01H 59/00 (2006.01); B81C 1/00 (2006.01); H01H 1/00 (2006.01); H01H 57/00 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 23/522 (2006.01)
CPC H01H 59/0009 (2013.01) [B81C 1/00246 (2013.01); H01H 1/0036 (2013.01); H01H 57/00 (2013.01); H01L 21/8221 (2013.01); H01L 27/0617 (2013.01); H01L 27/0688 (2013.01); B81B 2201/018 (2013.01); B81C 2203/0735 (2013.01); B81C 2203/0771 (2013.01); H01H 2001/0068 (2013.01); H01H 2001/0078 (2013.01); H01H 2059/0054 (2013.01); H01L 23/522 (2013.01); H01L 2924/0002 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method, comprising:
applying a first potential to a first part of a structure of a switching device, the switching device comprising:
a beam held by the structure at a beam pivot point, the beam having a beam contact region, the structure being substantially symmetrical with respect to the beam pivot point, the beam extending in a cavity of a back end of line region of a semiconductor device, the back end of line region comprising a plurality of metallization levels disposed in one or more insulating layers; and
a first contact region extending into the cavity adjacent the beam, a same metallization level of the plurality of metallization levels comprising the beam, the structure, and the first contact region; and
pivoting the beam at the beam pivot point, in a first direction in response to the applying of the first potential, causing the beam contact region to pivot to physically and electrically contact the first contact region.