US 12,272,419 B2
Charge pump having switch circuits for blocking leakage current during sudden power-off, and flash memory including the same
Yeji Shin, Suwon-si (KR); Tae-Hong Kwon, Suwon-si (KR); Yoonjae Lee, Suwon-si (KR); and Seokin Hong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 30, 2023, as Appl. No. 18/217,087.
Prior Publication US 2024/0127865 A1, Apr. 18, 2024
Int. Cl. G11C 5/14 (2006.01); G11C 16/12 (2006.01); G11C 16/30 (2006.01)
CPC G11C 5/145 (2013.01) [G11C 16/12 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A charge pump of a flash memory, comprising:
an output terminal;
a first stage pump connected between the output terminal and a first pump node; and
a second stage pump connected between the first pump node and a second pump node,
wherein the first stage pump includes:
a first switch circuit connected between a power terminal and the first pump node; and
a first pump circuit connected to the first pump node and configured to:
generate a first pumping voltage by using a voltage of the first pump node in response to a first clock signal; and
provide the first pumping voltage to the output terminal, and
wherein the first switch circuit is configured to:
provide, in a normal operation, a power supply voltage from the power terminal to the first pump node in response to a first stage signal; and
block, in a sudden power-off event, a current flow from the first pump node to the power terminal.