US 12,272,394 B2
Sensing and tuning for memory die power management
Fuad Badrieh, Boise, ID (US); Thomas H. Kinsley, Boise, ID (US); and Baekkyu Choi, San Jose, CA (US)
Filed by Lodestar Licensing Group, LLC, Evanston, IL (US)
Filed on Jul. 5, 2023, as Appl. No. 18/218,434.
Application 18/218,434 is a continuation of application No. 17/470,743, filed on Sep. 9, 2021, granted, now 11,721,386.
Application 17/470,743 is a continuation of application No. 16/863,967, filed on Apr. 30, 2020, granted, now 11,133,053, issued on Sep. 28, 2021.
Application 16/863,967 is a continuation of application No. 16/185,464, filed on Nov. 9, 2018, granted, now 11,081,161, issued on Aug. 3, 2021.
Prior Publication US 2024/0005978 A1, Jan. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 5/14 (2006.01); G11C 11/4074 (2006.01)
CPC G11C 11/4074 (2013.01) 20 Claims
OG exemplary drawing
 
1. A method, comprising:
determining, by a power management component, that a first voltage associated with operation of a memory array is lower than a threshold associated with operating the memory array; and
transmitting, to a host device, a feedback signal based at least in part on determining that the first voltage is lower than the threshold.