US 12,272,043 B2
Semiconductor topography simulation of non-removal type processes
Zhengping Jiang, Hsinchu (TW); Nuo Xu, San Jose, CA (US); Ji-Ting Li, Hsinchu (TW); Yuan Hao Chang, Hsinchu (TW); Zhiqiang Wu, Hsinchu County (TW); and Wen-Hsing Hsieh, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 4, 2022, as Appl. No. 17/832,586.
Prior Publication US 2023/0394642 A1, Dec. 7, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06T 7/00 (2017.01); G06T 15/08 (2011.01)
CPC G06T 7/0004 (2013.01) [G06T 15/08 (2013.01); G06T 2207/10028 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for topography simulation of a physical structure under a topography-changing process, comprising:
initializing a voxel mesh as a three-dimensional (3D) representation of the physical structure by a central processing unit (CPU);
generating a batch of particles;
simulating a flight path of at least one of the particles with a ray-tracing method by a graphics processing unit (GPU);
identifying a voxel unit in the voxel mesh that intersects the flight path and a surface normal of the voxel unit by the GPU;
passing information describing a moment the one of the particles hitting the voxel unit from the GPU to the CPU;
determining a surface reaction between the one of the particles and the voxel unit by the CPU; and
adding an extra voxel unit adjacent to the voxel unit based on the determining of the surface reaction.