US 12,271,611 B2
Method of operating a storage device including detecting an abnormal area, where an access time exceeds a reference latency, as an optional area in the nonvolatile memory device and storing optional data in the optional area, and a storage device for performing the method
Dongouk Moon, Seongnam-si (KR); Sanghwa Jin, Seongnam-si (KR); and Jinwook Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 3, 2022, as Appl. No. 17/879,967.
Claims priority of application No. 10-2022-0002643 (KR), filed on Jan. 7, 2022.
Prior Publication US 2023/0221875 A1, Jul. 13, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/064 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of operating a storage device including a nonvolatile memory device, the method comprising:
detecting an abnormal area as an optional area in the nonvolatile memory device, the abnormal area being a portion of the nonvolatile memory device where an access time exceeds a reference latency; and
storing optional data in the optional area, wherein
the storage device does not map a physical address of the optional area to a logical address, and
the storage device does not provide an address of the optional area to a host.