US 12,271,217 B2
Current reference circuit with process, voltage, and wide-range temperature compensation
Mohammad Reza Mahmoodi, Goleta, CA (US); and Martin Lueker-Boden, Fremont, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Sep. 6, 2022, as Appl. No. 17/903,464.
Prior Publication US 2024/0077902 A1, Mar. 7, 2024
Int. Cl. G05F 3/24 (2006.01); G11C 5/14 (2006.01)
CPC G05F 3/245 (2013.01) [G05F 3/247 (2013.01); G11C 5/147 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A reference current generator circuit comprising:
a first circuit configured to generate a first current proportional to absolute temperature;
a second circuit comprising a first transistor, a second transistor, a third transistor, and a fourth transistor, wherein the second circuit is configured to generate a second current complementary to absolute temperature based on the first and second transistors operating in respective triode regions and the third and fourth transistors operating in respective saturation regions; and
a node, connected to the first and second circuit, at which the second current compensates the first current;
wherein source terminals of the second and third transistors are connected to an input voltage, drain terminals of the second and fourth transistors are connected to the node, a gate terminal of the second transistor is connected to gate and drain terminals of the third transistor and to a drain terminal of the first transistor, and a gate terminal of the fourth transistor is connected to the node and to a gate terminal of the first transistor;
wherein when a respective transistor is operating in a respective triode region its gate to source voltage is greater than its threshold voltage based on the input voltage, and its drain to source voltage is less than a difference between its gate to source voltage and its threshold voltage; and
wherein when a respective transistor is operating in a respective saturation region its gate to source voltage is greater than its threshold voltage based on the input voltage, and its drain to source voltage is greater than the difference between its gate to source voltage and its threshold voltage.